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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1430 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) *Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B APPLICATIONS *Designed for low-frequency power amplifiers and lowspeed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE -100 V -100 -7 V V -5 -10 -0.5 2 W 20 150 -55~150 A A A UNIT .cn mi e Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Tstg Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1430 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA B -1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -2A; IB= -2mA B -2.0 V A Collector Cutoff Current VCB= -100V; IE= 0 -1.0 hFE-1 hFE-2 DC Current Gain IC= -2A; VCE= -2V IC= -4A; VCE= -2V 2000 20000 DC Current Gain 500 fT Current-Gain--Bandwidth Product IC= -0.5A; VCE= -5V COB Output Capacitance Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IE= 0; VCB= -10V; ftest= 1MHz .cn mi e 80 MHz 60 pF 0.5 s s s IC= -2A, IB1= -IB2= -2mA, VCC -50V; RL= 25 1.0 1.0 hFE-1 Classifications M 2000-5000 L 4000-10000 K 8000-20000 isc Websitewww.iscsemi.cn 2 |
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